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Dr. Brijesh Kumar Singh

Qualification : Ph.D.

D.O.J : 21-08-2017

Details of Educational Qualification:

Course Specialization Group College Name/University Year of Passing
Ph.D. Electronics & Communication Engineering Electronics & Communication Engineering Motilal Nehru National Institute of Technology, Allahabad, India 2017
M.E. Instrumentation and Control Instrumentation and Control NITTTR, Chandigarh/ Panjab University 2012
B.Tech. Electronics and Instrumentation Electronics and Instrumentation IET Lucknow, Uttar Pradesh/ Lucknow University 2002

Note : Students are advised to meet me in Room No : EB-215 D (Staff room) at any time other than my class hours mentioned in the below timetable for any discussions related to the subjects & research.

My Schedule for 2019-20

                  

List of Publications

S.No Title of the Paper Full Details of Journal Name / Conference Name, Volume number, page number, Date
1 "Optical and Electrical Characterization of Stable p-type ZnO thin films obtained by Bismuth Doping."Journal of Nanoscience and Nanotechnology (2017). Accepted) (I.F.- 1.483)
2 "Fabrication and Characterization of Cu Doped ZnO/Bi Doped ZnO Nanolaminates as Mirror for Application in Optical Devices." IEEE Transactions on Nanotechnology 16, no. 2 (2017): 203-208.. (I.F.- 1.702)
3 "Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky Diode, Thin Solid Film Vol. 612, 259–266 (2016). (I.F.- 1.761)
4 "Fabrication and Characterization of Au/p-ZnO Schottky Contacts." Superlattices and Microstructures,vol.85, 697 (2015).(I.F.- 2.117)
5 "Influence of Bi concentration on structural and optical properties of Bi doped p-type ZnO thin films prepared by sol–gel method." Journal of Materials Science: Materials in Electronics: 27(3), 2360-2366.(2016).(I.F.- 1.798)
6 "Refractive Index and Dielectric Constant Evaluation of Bi doped p -ZnO Thin Film Deposited by Sol gel Method". Journal of Electron Devices Vol. 23, No. 1, 1917-1921 (2016).
7 "Work Function Estimation Of Bismuth Doped ZnO Thin Film". Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 2, No.2/3, (2016).
8 "Determination of optical parameters of p-ZnO thin film obtained by Bi doping". In Annual IEEE India Conference (INDICON) (pp. 1-4). IEEE (2015).
9 “Determination of optical properties of copper doped ZnO thin film Contacts." Etmn 2015 –AIP proceddings.
10 "Short channel effects (SCEs) characterization of underlaped dual-K spacer in dual-metal gate FinFET device." In Control, Computing, Communication and Materials (ICCCCM), 2016 International Conference on, pp. 1-6. IEEE, 2016.
11 "Analytical Modeling and Simulation of Surface Potential of Short Channel Double Halo Strained-Si (DHS)-DG MOSFET "ICCCCM (2016).
12 " Fabrication and Characterization of Thin-film Heterojunction Diodes for Smart Systems" In Emerging Devices and Smart Systems (ICEDSS), 2017 Conference on (pp. 180-183). IEEE
13 " p-n Homojunction based on Bi-Doped p-Type ZnO and Undoped n-Type ZnO for Optoelectronic Application." Journal of Electronic Materials (2017) (Communicated).
14 "Fabrication and Characterization of Ni/p-ZnO and Pd/p-ZnO Schottky Contacts." IEEE Transactions on Electron Devices (2017) (Communicated).

Patent Details

S.No Title of the patent Application Number Date of filing Indian / International patent Author status 1st/ 2nd Author Published Date
1 Microfabrication Annealing Furnace with Integrated Magnetic Field and Electric Field Application and Affixable Hall Measurement Setup therein. 201611018593A 30/05/2016 Indian Patent Inventor Published on 15/07/2016