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Dr. Chandramauleshwar Roy

Qualification : Ph.D.

D.O.J : 03-12-2018

Details of Educational Qualification:

Course Specialization Group College Name/University Year of Passing
Ph.D. VLSI and Microelectronics Electronics & Communication Engineering BIT, Mesra 2019
M.Tech. VLSI Electronics & Communication Engineering MANIT, Bhopal 2012
B.E. Electronics & Communication Engineering Electronics & Communication Engineering R.G.P.V, Bhopal 2008

List of Publications

S.No Title of the Paper Full Details of Journal Name / Conference Name, Volume number, page number, Date
1 “Design of Differential TG based 8T SRAM Cell for Ultralow Power Applications,” Microsystem Technologies, Publisher: Springer. DOI: 10.1007/s00542-018-4035-7, ISSN:0946-7076 SCI 1.195
2 “Power-aware sourse feedback single-ended 7T SRAM cell at nanoscale regime,” Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems. DOI: 10.1007/s00542-017-3570-y, Publisher: Springer. http://link.springer.com/content/pdf/10.1007%2Fs00542-017-3570-y.pdf, ISSN:0946-7076 SCI 1.195
3 "Modeling of MTJ and its validation using nanoscale MRAM bitcell," Journal of Engineering Science and Technology, vol. 12, no. 6, pp. 1525 – 1540, Jun. 2017. Publisher: Taylor’s University, http://jestec.taylors.edu.my/V12Issue6.htm ISSN: 1823-4690 ESCI, 0.37
4 "Design of 10T SRAM Cell using Column-Line Assist and DTMOS Techniques," Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-6, Oct. 2016. DOI: 10.17485/ijst/2016/v9i40/99509, http://www.indjst.org/index.php/indjst/article/view/99509. ISSN: 0974-6846. 0974-5645 SCOPUS 0.86
5 "TG Based 2T2M RRAM Using Memristor as Memory Element," Indian Journal of Science and Technology, vol. 9, no. 33, pp. 1-5, Sep. 2016. DOI: 10.17485/ijst/2016/v9i33/99508, http://www.indjst.org/index.php/indjst/article/view/99508. ISSN: 0974-6846. 0974-5645 SCOPUS 0.86
6 "Comparative Analysis Of Variable N-T Sram Cells," International Journal of Advanced Research in Computer Science and Software Engineering, Volume 3, Issue 4, PP. 612-619,April 2013. ISSN(Online): 2277128X ISSN(print): 22776451 Approved by UGC 2.5
7 "A New CMOS Voltage Divider Based Current Mirror, Compared with the Basic and Cascode Current Mirrors," International Journal of Advanced Research in Computer Science and Software Engineering, Volume 3, Issue 4, PP. 625-630,April 2013. ISSN(Online): 2277128X ISSN(print: 22776451, Approved by UGC 2.5
8 ”A NEW APPROACH FOR Leakage Power Reduction Techniques in Deep Submicron Technologies in CMOS CIRCUIT for VLSI Applications,” International Journal of Advanced Research in Computer Science and Software Engineering, Volume 3, Issue 5, PP. 318-325, May 2013. ISSN(Online): 2277128X ISSN(print): 22776451, Approved by UGC 2.5
9 “FET Based RRAM Cell using Memristor as Memory Element,” 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneshwaar, Odisha, India, 19-20 May. 2018, vol. 2, pp. 83-87. Print ISBN:81-85824-46-1
10 "Design of Low Power 8T SRAM Cell," 4th International Conference on Microelectronics, Circuits and Systems (Micro2017), Darjeeling, India, 3-4 Jun. 2017, vol. 2, pp. 50-53. Print ISBN: 978-93-80813-45-5
11 "10T SRAM Cell With Reduced Leakage Power," 4th International Conference on Microelectronics, Circuits and Systems (Micro2017), Darjeeling, India, 3-4 Jun. 2017, vol. 2, pp. 159-162. Print ISBN: 978-93-80813-45-5
12 “Ultra Low Power Differential 7T SRAM Cell at 16 nm Technology node,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 2, pp. 102– 106. Print ISBN: 81-85824-46-0.
13 “Comparative study of various 8T SRAM Cells,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 2, pp. 42– 46. Print ISBN: 81-85824-46-0.
14 “Comparative analysis of 7T SRAM cells in subthreshold regime at 16nm technology node,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 1, pp. 79– 82. Print ISBN: 81-85824-46-0.
15 "Low Power Single-Ended 7T SRAM Cell at 16 nm Technology node," International Conference on Computing, Communication and Sensor Network (CCSN-2015), Kolkata, India, Dec. 24-25, 2015, vol. 2, pp. 56 – 60. Print ISBN: 81-85824-46-0.
16 “Comparative Analysis of Various 9T SRAM Cell at 22-nm Technology Node,” in Proc. 2nd IEEE Int. Conf. on Recent Trends in Information Systems (ReTIS-15), Jadavpur University, Kolkta, India, Jul. 9-11, 2015, pp. 491 – 496. DOI: http://dx.doi.org/10.1109/ReTIS.2015.7232929, ISBN: 978-1-4799-8348-3
17 “Design of a Stable Read-Decoupled 6T SRAM Cell at 16-nm Technology Node” IEEE International Conference on Computational Intelligence & Communication Technology (CICT), ABES Engineering College, Ghaziabad, U.P., India, February 13-14, 2015, pp. 524 – 528, DOI: 10.1109/CICT.2015.117, http://dx.doi.org/10.1109/CICT.2015.117.Print ISBN: 978-1-4799-6022-4.
18 “Highly Stable Subthreshold Single ended 7T SRAM Cell,” IEEE Emerging Technology Trends in Electronics, Communication and Networking (ET2ECN-2014), SVNIT, Surat, Gujarat, India, December 26-27, 2014, pp. 1– 4.DOI: 10.1109/ET2ECN.2014.7044928, http://dx.doi.org/10.1109/ET2ECN.2014.7044928, Print ISBN: 978-1-4799-6985-2.
  • Participated in the 8th International Conference on Computing, Communication and Sensor Network (CCSN)2019 was organized by Institute of Aeronautical Engineering, Hyderabad in association with Applied Computer Technology, Kolkata, India held on 19th and 20th October, 2019