Dr. Prashanth Kumar

Qualification : Ph.D.

Details of Educational Qualification:

Course Specialization Group College Name/University Year of Passing
Ph.D. Microelectronics Electronics & Communication Engineering National Institute of Technology, Silchar 2018
M.Tech. Microelectronics & VLSI Electronics & Communication Engineering National Institute of Technology, Silchar 2014
B.Tech. Electronics & Communication Engineering Electronics & Communication Engineering VITAM College of Engineering, Vishakapatnam, JNTUH 2008

Note : Students are advised to meet me in Room No : EB-215 D (Staff room) at any time other than my class hours mentioned in the below timetable for any discussions related to the subjects & research.

My Schedule for 2019-20


List of Publications

S.No Title of the Paper Full Details of Journal Name / Conference Name, Volume number, page number, Date
1 “Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device” Silicon, Apr. 2017, DOI:10.1007/s12633-016-9534-5, (Impact Factor : 0.704)
2 “2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET” Journal of Computational Electronics, vol. 16, no. 3, pp. 658–665, Sep. 2017, (Impact Factor : 1.104).
3 “2D analytical model for surface potential based electric field and impact of wok function in DMG SB MOSFET” Super lattices and Micro structures, vol. 109, pp. 805–814, Sep. 2017, (Impact Factor : 2.117)
4 “An improved gate capacitance for two dimensional junctionless transistor” Green Computing Communication and Electrical Engineering (ICGCCEE), 2014 International Conference IEEE on, 2014, pp. 1–3.
5 “An inclusive study on characteristics of junctionless transistor” Electronics and Communication Systems (ICECS), 2014 International Conference IEEE on, 2014, pp. 1–5.
6 “Gate Capacitance Extraction Two Dimensional T- Shaped Junction less Transistor Using Sentaurus TCAD” International Journal of Innovative Research in Science, Engineering and Technology, 2014 International Conference on, 2014, pp. 1486–1489.