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Dr. Remashan Kariyadan

Qualification : Ph.D.

Details of Educational Qualification:

Course Specialization Group College Name/University Year of Passing
Ph.D. Microelectronics Microelectronics IIT, Madras 1998
M.Tech. Microelectronics Microelectronics IIT, Bombay 1991
M.Sc. Physics with Electronics Physics CUSAT, Cochin 1989
B.Sc. Physics Physics University of Calicut 1987

Note : Students are advised to meet me in Room No : WB-115 at any time other than my class hours mentioned in the below timetable for any discussions related to the subjects & research.

My Schedule for 2019-20


My Publications

S.No Title of the Paper Full Details of Journal Name / Conference Name, Volume number, page number, Date
1 “Methods to restore the surface properties of silicon subjected to RIE” International Workshop on Physics of Semiconductor Devices, New Delhi, India, 312-314 (1993).
2 “Silicon nitride/(NH4)2Sx passivation of n-GaAs to unpin the Fermi level” Electronics Letters, 32, 694-695 (1996).
3 “Optimization of PECVD silicon oxynitride for silicon MIS devices with low interface state density” Solid-State Electronics, 39, 1808-1810 (1996).
4 “GaAs metal insulator field effect transistors with excellent intrinsic transconductance and stable drain currents using (NH4)2Sx chemical treatment” IEEE Electron Device Letters, 19, 466-468 (1998).
5 “MIS devices on n-GaAs using silicon nitride/(NH4)2Sx passivation” Proceedings of the 85th session of the Indian Science Congress, Part III (Young Scientists Abstracts), 34-35, Hyderabad, India, January, 1998.
6 “Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density” Thin Solid Films, 342, 20-29 (1999).
7 “Stable GaAs MIS capacitors and MISFETs by the (NH4)2Sx treatment and hydrogenation using PECVD silicon nitride gate insulator” 3rd International Conference on the Emerging Microelectronics and Interconnection Technologies (EMIT-2K),IISc, Bangalore, INDIA, February 22-24, 2000.
8 “Inductively Coupled Plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples” Semiconductor Science and Technology, 15 , 386-389 (2000).
9 “Stable Gallium Arsenide MIS capacitors and MIS Field Effect Transistors by (NH4)2Sx treatment and hydrogentaion using Plasma Deposited Silicon Nitride gate insulator” IEEE Transactions on Electron Devices, 49, 343-353, (2002).
10 “Modeling of inversion-layer carrier mobilities in all regions of MOSFET operation” Solid State Electronics, 46, 153-156 (2002)
11 “Combined effect of (NH4)2Sx treatment & post-metallisation annealing with plasma-enhanced chemical vapour deposition silicon nitride gate dielectric on the GaAs metal-insulator-semiconductor characteristics and the photoluminescence characteristics of GaAs substrates” Semiconductor Science and Technology, 17, 243-248 (2002)
12 “Simulation and Experimental Study of AlGaAs/InGaAs/GaAs Based Single and Double Hetero Pseudomorphic High Electron Mobility Transistors” ICMAT-2003 Conference, Singapore
13 “A compact Analytical I-V model of AlGaAs/InGaAs/GaAs p-HEMTs based on non-linear charge control model” Microelectronics Engineering Journal, Vol 75, Issue 2, 127-136 (2004)
14 “High voltage Mesa Type n-GaN Schottky Diodes" Electron Devices and Materials Symposia, November, 24-25, 2005, I-Shou University, Kaohsiung, Taiwan
15 “Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination” Microelectronic Engineering, Vol. 84, 2907-2915 (2007)
16 “The Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO TFTs” Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, Tsukuba, 2007, pp. 1056-1057.
17 “ZnO-based thin film transistors having high refractive index silicon nitride” Applied Physics Letters, 91, 182101, (2007)
18 “Effect of N2O Plasma Treatment on the Performance of ZnO TFTs” Electrochemical and Solid State Letters, 11 (3), H55-H59 (2008)
19 “Performance Enhancement of Bottom-gate ZnO TFTs by Hydrogenation Using Silicon Nitride Gate Insulator” International Conference on Nano Science and Nano Technology, Nov. 8-9, 2007, Gwangju, Korea
20 “Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors” Japanese Journal of Applied Physics, Vol. 47, No. 4, pp. 2848-2853 (2008)
21 “Impact of Hydrogenation of ZnO TFTs by Plasma Deposited Silicon Nitride Gate Dielectric” IEEE Transactions on Electron Devices, 55, 2736-2743, (2008)
22 “Ring Oscillator Circuit based on ZnO Thin Film Transistors” 2008 International Conference on Solid State Devices and Materials, Tsukuba, Japan
23 “Ring Oscillator Circuit Based on ZnO Thin-film Transistors Fabricated by RF Magnetron Sputtering” Journal of the Korean Physical Society, Vol. 55, No. 4, , pp. 1514_1518 (October 2009)
24 “Enhancement-mode MOCVD Grown ZnO TFTs on Glass Substrates Using N2O Plasma Treatment” 2009 International Conference on Solid State Devices and Materials, Sendai, Japan (2009) pp. 956-957
25 “Enhanced Performance of MOCVD ZnO TFTs on Glass Substrates with Nitrogen-rich Silicon Nitride Gate Dielectric” Journal of the Electrochemical Society, 157 , H60-H64 (2010)
26 “Enhancement-mode MOCVD Grown ZnO TFTs on Glass Substrates Using N2O Plasma Treatment” Japanese Journal of Applied Physics, 49, 04DF20 (2010)
27 “High Field-Effect Mobility Bottom-Gated MOCVD ZnO Thin-Film Transistors with SiO2/Si3N4 Bilayer Gate Dielectric” Journal of the Electrochemical Society, 157, H1110-H1115 (2010).
28 “High Performance MOCVD-Grown ZnO Thin-Film Transistor with a Thin MgZnO Layer at Channel/Gate Insulator Interface” Journal of the Electrochemical Society, 157, H1121-H1126 (2010).
29 “Improved Characteristics of MOCVD Grown ZnO TFTs by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified TFT Layer Structure” 2010 International Conference on Solid State Devices and Materials, The University of Tokyo, Tokyo, Japan.
30 “Improved Characteristics of MOCVD Grown ZnO TFTs by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified TFT Layer Structure” Japanese Journal of Applied Physics, 50, 04DJ08 (2011).
31 “Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors” ECS Journal of Solid State Science and Technology, 1 (4) Q70-Q78 (2012).
32 “Enhanced capacitance ratio and low minimum capacitance of varactor devices based on depletion-mode Ga-Doped ZnO TFTs with a drain-offset structure” J. Phys. D: Appl. Phys. 45 (2012) 435103.